2N4401RLRM
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- Mfr.Part #
- 2N4401RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 35,631
- In Stock ：
- 35,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- JESD-30 Code :
- O-PBCY-T3
- Collector Emitter Saturation Voltage :
- 750mV
- Terminal Position :
- BOTTOM
- hFE Min :
- 20
- Collector Emitter Voltage (VCEO) :
- 750mV
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2N4401
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 40V
- Max Collector Current :
- 600mA
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Contains Lead
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 255ns
- Element Configuration :
- Single
- Transition Frequency :
- 250MHz
- JESD-609 Code :
- e0
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 35ns
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2005
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 240
- Qualification Status :
- Not Qualified
- Current Rating :
- 600mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Packaging :
- Tape and Box (TB)
- Datasheets
- 2N4401RLRM
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401RLRM Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N4401RLRM Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401RLRM Applications
There are a lot of ON Semiconductor
2N4401RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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