2N4401G
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- Mfr.Part #
- 2N4401G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 114,463
- In Stock ：
- 114,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 5.33mm
- Turn Off Time-Max (toff) :
- 255ns
- JESD-609 Code :
- e1
- Base Part Number :
- 2N4401
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- hFE Min :
- 20
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 250MHz
- Width :
- 4.19mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 250MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Packaging :
- Bulk
- Pin Count :
- 3
- Number of Elements :
- 1
- Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 4.535924g
- Voltage - Rated DC :
- 40V
- Type :
- GENERAL PURPOSE
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Current Rating :
- 600mA
- ECCN Code :
- EAR99
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 750mV
- Pbfree Code :
- yes
- Datasheets
- 2N4401G
2N4401G Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4401G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 600mA volts.
2N4401G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401G Applications
There are a lot of ON Semiconductor
2N4401G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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