2N4401G
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- Mfr.Part #
- 2N4401G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 114,463
- In Stock ：
- 114,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- Type :
- GENERAL PURPOSE
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 255ns
- Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Radiation Hardening :
- No
- Base Part Number :
- 2N4401
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Voltage - Rated DC :
- 40V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transition Frequency :
- 250MHz
- Terminal Position :
- BOTTOM
- hFE Min :
- 20
- Current Rating :
- 600mA
- Height :
- 5.33mm
- Width :
- 4.19mm
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Published :
- 2001
- Weight :
- 4.535924g
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Length :
- 5.2mm
- Collector Emitter Saturation Voltage :
- 750mV
- Frequency :
- 250MHz
- Max Power Dissipation :
- 625mW
- Packaging :
- Bulk
- Datasheets
- 2N4401G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4401G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 600mA volts.
2N4401G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401G Applications
There are a lot of ON Semiconductor
2N4401G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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