2N3764U4
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- Mfr.Part #
- 2N3764U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 10,865
- In Stock ：
- 10,865
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Mounting Type :
- Surface Mount
- Manufacturer :
- Microchip
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Package / Case :
- 3-SMD, No Lead
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Current - Collector (Ic) (Max) :
- 1.5 A
- Current - Collector Cutoff (Max) :
- 100μA
- Product Status :
- Active
- Package :
- Bulk
- Subcategory :
- Transistors
- Transistor Type :
- PNP
- Supplier Device Package :
- U4
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Product Type :
- BJTs - Bipolar Transistors
- Power - Max :
- 500 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A, 1.5V
- Datasheets
- 2N3764U4
PNP -55°C ~ 200°C (TJ) 100μA 3-SMD, No Lead Surface Mount
2N3764U4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1A, 1.5V.When VCE saturation is 900mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package U4 contains the product.The device has a 40 V maximal voltage - Collector Emitter Breakdown.
2N3764U4 Features
the DC current gain for this device is 30 @ 1A, 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of U4
2N3764U4 Applications
There are a lot of Microchip Technology
2N3764U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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