2N3737
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- Mfr.Part #
- 2N3737
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO46-3
- Stock
- 34,930
- In Stock ：
- 34,930
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn On Time-Max (ton) :
- 48ns
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-SMD, No Lead
- Published :
- 2007
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Turn Off Time-Max (toff) :
- 60ns
- Max Collector Current :
- 1.5A
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- Datasheets
- 2N3737
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NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3737UB Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2N3737UB Applications
There are a lot of Microsemi Corporation
2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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