2N3737
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- Mfr.Part #
- 2N3737
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO46-3
- Stock
- 34,930
- In Stock ：
- 34,930
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 1.5A
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 500mW
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 60ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 75V
- Max Power Dissipation :
- 500mW
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Packaging :
- Bulk
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 48ns
- Datasheets
- 2N3737
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NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3737UB Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2N3737UB Applications
There are a lot of Microsemi Corporation
2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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