2N3583 PBFREE
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- Mfr.Part #
- 2N3583 PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 175V 1A TO-66
- Stock
- 437
- In Stock ：
- 437
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 175V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Frequency - Transition :
- 10MHz
- Power - Max :
- 35W
- Terminal Finish :
- MATTE TIN OVER NICKEL
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 125mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 22 Weeks
- JESD-609 Code :
- e3
- Package / Case :
- TO-213AA, TO-66-2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10mA
- Datasheets
- 2N3583 PBFREE
NPN -65°C~200°C TJ 10mA TO-213AA, TO-66-2 Tube Through Hole
2N3583 PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 500mA 10V.When VCE saturation is 5V @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The device has a 175V maximal voltage - Collector Emitter Breakdown.
2N3583 PBFREE Features
the DC current gain for this device is 40 @ 500mA 10V
the vce saturation(Max) is 5V @ 125mA, 1A
2N3583 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N3583 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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