2N3501UB

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Mfr.Part #
2N3501UB
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS NPN 150V 0.3A UB
Stock
64
In Stock :
64

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Package / Case :
3-SMD, No Lead
Emitter Base Voltage (VEBO) :
6V
Number of Elements :
1
ECCN Code :
EAR99
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Operating Temperature :
-65°C~200°C TJ
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
150V
Power Dissipation :
500mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Vce Saturation (Max) @ Ib, Ic :
400mV @ 15mA, 150mA
Terminal Finish :
TIN LEAD
JESD-609 Code :
e0
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Configuration :
Single
Mount :
Surface Mount
HTS Code :
8541.21.00.95
RoHS Status :
Non-RoHS Compliant
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
150V
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA ICBO
Factory Lead Time :
12 Weeks
Published :
2007
Packaging :
Bulk
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
300mA
Series :
Military, MIL-PRF-19500/366
Terminal Position :
Dual
Datasheets
2N3501UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3501UB from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-SMD, No Lead, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, 2N3501UB pinout, 2N3501UB datasheet PDF, 2N3501UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3501UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3501UB


NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount

2N3501UB Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 15mA, 150mA.An emitter's base voltage can be kept at 6V to gain high efficiency.

2N3501UB Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V


2N3501UB Applications


There are a lot of Microsemi Corporation
2N3501UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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