2N3563
- Mfr.Part #
- 2N3563
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-106-3 Domed
- Datasheet
- Download
- Description
- TRANS NPN 12V TO106
- Stock
- 43,810
- In Stock :
- 43,810
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Collector-Base Capacitance-Max :
- 1.7pF
- Number of Terminations :
- 4
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- O-MBCY-W4
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Frequency - Transition :
- 600MHz
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Transition Frequency :
- 600MHz
- Operating Temperature (Max) :
- 125°C
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation-Max (Abs) :
- 0.2W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Pin Count :
- 3
- Package / Case :
- TO-106-3 Domed
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- 2N3563
NPN 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-106-3 Domed Bulk Through Hole
2N3563 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 8mA 10V DC current gain.There is a transition frequency of 600MHz in the part.Single BJT transistor shows a 12V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3563 Features
the DC current gain for this device is 20 @ 8mA 10V
a transition frequency of 600MHz
2N3563 Applications
There are a lot of Central Semiconductor Corp
2N3563 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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