2N3506U4
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- Mfr.Part #
- 2N3506U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 20,788
- In Stock ：
- 20,788
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Subcategory :
- Transistors
- Transistor Type :
- NPN
- Manufacturer :
- Microchip
- Product Status :
- Active
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA, 1V
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- 3-SMD, No Lead
- Power - Max :
- 1 W
- Series :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Supplier Device Package :
- U4
- Current - Collector (Ic) (Max) :
- 3 A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Brand :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 1μA
- Datasheets
- 2N3506U4
NPN -65°C ~ 200°C (TJ) 1μA 3-SMD, No Lead Surface Mount
2N3506U4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 500mA, 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 40 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3506U4 Features
the DC current gain for this device is 50 @ 500mA, 1V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the supplier device package of U4
2N3506U4 Applications
There are a lot of Microchip Technology
2N3506U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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