2N2484
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- Mfr.Part #
- 2N2484
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.05A TO18
- Stock
- 5,389
- In Stock ：
- 5,389
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 360mW
- Min Operating Temperature :
- -65°C
- Supplier Device Package :
- TO-18
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Polarity :
- NPN
- Max Operating Temperature :
- 200°C
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 360mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100µA, 1mA
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Power Dissipation :
- 360mW
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 2nA
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 225 @ 10mA 5V
- Max Collector Current :
- 50mA
- Factory Lead Time :
- 12 Weeks
- Datasheets
- 2N2484
NPN -65°C~200°C TJ 2nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2484 Overview
In this device, the DC current gain is 225 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100μA, 1mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 50mA volts.
2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18
2N2484 Applications
There are a lot of Microsemi Corporation
2N2484 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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