ZXTPS717MCTA
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- Mfr.Part #
- ZXTPS717MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.4A DFN3020B-8
- Stock
- 6,642
- In Stock ：
- 6,642
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Max Collector Current :
- 4A
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 8
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Pbfree Code :
- yes
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 4.4A
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 16 Weeks
- Pin Count :
- 3
- Published :
- 2016
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Base Voltage (VCBO) :
- -20V
- JESD-609 Code :
- e4
- Collector Emitter Breakdown Voltage :
- 12V
- Element Configuration :
- Dual
- Transition Frequency :
- 110MHz
- Collector Emitter Saturation Voltage :
- -10mV
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -4A
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 3W
- Package / Case :
- 8-VDFN Exposed Pad
- Transistor Type :
- PNP + Diode (Isolated)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 110MHz
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Datasheets
- ZXTPS717MCTA
PNP + Diode (Isolated) -55°C~150°C TJ 100nA 1 Elements 8 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZXTPS717MCTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -10mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 310mV @ 150mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A transition frequency of 110MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 4A volts at its maximum.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated
ZXTPS717MCTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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