ZXTP5401GTA
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- Mfr.Part #
- ZXTP5401GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT223-3
- Stock
- 32,458
- In Stock ：
- 32,458
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.65mm
- Base Part Number :
- ZXTP5401
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Max Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- -500mV
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Published :
- 2007
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 160V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 150V
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 150V
- Collector Emitter Voltage (VCEO) :
- 150V
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Width :
- 3.7mm
- Length :
- 6.7mm
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Current - Collector (Ic) (Max) :
- 600mA
- Datasheets
- ZXTP5401GTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP5401GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 2A volts.
ZXTP5401GTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401GTA Applications
There are a lot of Diodes Incorporated
ZXTP5401GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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