ZXTP25100BFHTA
- Mfr.Part #
- ZXTP25100BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT23-3
- Stock
- 40
- In Stock :
- 40
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- SOT-23-3
- Published :
- 2006
- Length :
- 3.05mm
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 2A
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -100V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -2A
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Power - Max :
- 1.25W
- Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Max Breakdown Voltage :
- 100V
- Power Dissipation :
- 1.81W
- Frequency - Transition :
- 200MHz
- Max Frequency :
- 200MHz
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.81W
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Saturation Voltage :
- -215mV
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Height :
- 1mm
- Emitter Base Voltage (VEBO) :
- -7V
- Width :
- 1.4mm
- Polarity :
- PNP
- Max Collector Current :
- 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Base Part Number :
- ZXTP25100B
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- ZXTP25100BFHTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -215mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 295mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Input voltage breakdown is available at 100V volts.Product comes in the supplier's device package SOT-23-3.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZXTP25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -215mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
the supplier device package of SOT-23-3
ZXTP25100BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25100BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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