ZXTP25040DZTA
- Mfr.Part #
- ZXTP25040DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT89-3
- Stock
- 1,339
- In Stock :
- 1,339
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Flat
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 4.46W
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- ZXTP25040D
- Max Breakdown Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Weight :
- 51.993025mg
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Height :
- 1.6mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Published :
- 2007
- Frequency :
- 270MHz
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Width :
- 2.6mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 4.46W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -350mV
- Gain Bandwidth Product :
- 270MHz
- Mount :
- Surface Mount
- Transition Frequency :
- 270MHz
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 350mA, 3.5A
- Max Collector Current :
- 3A
- Length :
- 4.6mm
- JESD-30 Code :
- R-PSSO-F3
- Power - Max :
- 2.4W
- Datasheets
- ZXTP25040DZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25040DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 350mA, 3.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.270MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXTP25040DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 270MHz
ZXTP25040DZTA Applications
There are a lot of Diodes Incorporated
ZXTP25040DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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