ZXTP25040DFHTA
- Mfr.Part #
- ZXTP25040DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT23-3
- Stock
- 3,157
- In Stock :
- 3,157
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -3A
- hFE Min :
- 300
- Voltage - Rated DC :
- -40V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- ZXTP25040D
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Type :
- PNP
- Power - Max :
- 1.25W
- Max Power Dissipation :
- 1.25W
- Transition Frequency :
- 270MHz
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.05mm
- Max Collector Current :
- 3A
- Mount :
- Surface Mount
- Width :
- 1.4mm
- Current Rating :
- -3A
- Terminal Position :
- Dual
- Height :
- 1mm
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Pin Count :
- 3
- Frequency :
- 270MHz
- Power Dissipation :
- 1.81W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 270MHz
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -220mV
- Weight :
- 7.994566mg
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 300mA, 3A
- Datasheets
- ZXTP25040DFHTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25040DFHTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -220mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 300mA, 3A.Maintaining the continuous collector voltage at -3A is essential for high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).270MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXTP25040DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 270MHz
ZXTP25040DFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25040DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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