ZXTP25012EFHTA
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- Mfr.Part #
- ZXTP25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 3.04mm
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 12V
- Base Part Number :
- ZXTP25012E
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Frequency :
- 310MHz
- Terminal Form :
- Flat
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 310MHz
- Element Configuration :
- Single
- Power - Max :
- 1.25W
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 12V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.02mm
- Pin Count :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 12V
- Transition Frequency :
- 310MHz
- Max Power Dissipation :
- 1.81W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -210mV
- Weight :
- 7.994566mg
- Width :
- 1.4mm
- Number of Terminations :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 12V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Datasheets
- ZXTP25012EFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 310MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTP25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz
ZXTP25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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