ZXTP2013ZTA
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- Mfr.Part #
- ZXTP2013ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.5A SOT89-3
- Stock
- 61,986
- In Stock ：
- 61,986
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- -240mV
- Pbfree Code :
- No
- Continuous Collector Current :
- -3.5A
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.1W
- Collector Base Voltage (VCBO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Gain Bandwidth Product :
- 125MHz
- Width :
- 2.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Current Rating :
- -3.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transition Frequency :
- 125MHz
- Weight :
- 51.993025mg
- Max Collector Current :
- 3.5A
- Length :
- 4.6mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.6mm
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTP2013
- Terminal Form :
- Flat
- Frequency :
- 125MHz
- Max Power Dissipation :
- 2.1W
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Voltage - Rated DC :
- -100V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Pin Count :
- 4
- Datasheets
- ZXTP2013ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2013ZTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 400mA, 4A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3.5A volts.
ZXTP2013ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 125MHz
ZXTP2013ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2013ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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