ZXTP2012ZTA
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- Mfr.Part #
- ZXTP2012ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4.3A SOT89-3
- Stock
- 7,125
- In Stock ：
- 7,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 120MHz
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PSFM-F3
- Current Rating :
- -4.3A
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- -60V
- Base Part Number :
- ZXTP2012
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Length :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- -60V
- Polarity/Channel Type :
- PNP
- Current :
- 4A
- Emitter Base Voltage (VEBO) :
- -7V
- Power Dissipation :
- 1.5W
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -100V
- Weight :
- 51.993025mg
- Width :
- 2.6mm
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 215mV @ 500mA, 5A
- hFE Min :
- 100
- Collector Emitter Breakdown Voltage :
- -80V
- Radiation Hardening :
- No
- Continuous Collector Current :
- -4.3A
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 120MHz
- Height :
- 1.6mm
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- Voltage :
- 60V
- Contact Plating :
- Tin
- Max Power Dissipation :
- 2.1W
- JESD-609 Code :
- e3
- Max Collector Current :
- -4.3A
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 4
- Current - Collector (Ic) (Max) :
- 4.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -160mV
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- ZXTP2012ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2012ZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.
ZXTP2012ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz
ZXTP2012ZTA Applications
There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.
-
Driver
-
Muting
-
Interface
-
Inverter
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