ZXTP2012ASTOA
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- Mfr.Part #
- ZXTP2012ASTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3.5A E-LINE
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -210mV
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- ZXTP2012A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 120MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Frequency :
- 120MHz
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 120MHz
- Pin Count :
- 3
- Package / Case :
- E-Line-3
- Width :
- 2.41mm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Current Rating :
- -3.5A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 4.77mm
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -60V
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- ECCN Code :
- EAR99
- Max Collector Current :
- 3.5A
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTP2012ASTOA
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PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Tape & Reel (TR) Through Hole
ZXTP2012ASTOA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 400mA, 4A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.
ZXTP2012ASTOA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 120MHz
ZXTP2012ASTOA Applications
There are a lot of Diodes Incorporated
ZXTP2012ASTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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