ZXTN619MATA
- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock :
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 2.45W
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 2.45W
- Pin Count :
- 3
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 320mV
- Packaging :
- Digi-Reel®
- Package / Case :
- 3-UDFN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Power - Max :
- 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 165MHz
- Number of Pins :
- 3
- Continuous Collector Current :
- 4A
- Width :
- 2.075mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Base Part Number :
- ZXTN619MA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 25nA
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Published :
- 2011
- Lead Free :
- Lead Free
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e4
- Collector Emitter Voltage (VCEO) :
- 50V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 580μm
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Frequency :
- 165MHz
- Transition Frequency :
- 165MHz
- Length :
- 2.08mm
- Element Configuration :
- Single
- Datasheets
- ZXTN619MATA

NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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