ZXTN4006ZTA
- Mfr.Part #
- ZXTN4006ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 200V 1A SOT89-3
- Stock
- 21,634
- In Stock :
- 21,634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 51.993025mg
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 200V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-F3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 200V
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 200V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2012
- Continuous Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZXTN4006
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 200V
- Height :
- 1.6mm
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Width :
- 2.6mm
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 1A
- Length :
- 4.6mm
- Power Dissipation :
- 1.5W
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 320mV
- Max Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Datasheets
- ZXTN4006ZTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN4006ZTA Overview
In this device, the DC current gain is 100 @ 150mA 320mV, which is the ratio between the base current and the collector current.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Input voltage breakdown is available at 200V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZXTN4006ZTA Features
the DC current gain for this device is 100 @ 150mA 320mV
the emitter base voltage is kept at 7V
ZXTN4006ZTA Applications
There are a lot of Diodes Incorporated
ZXTN4006ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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