ZXTN25040DFHTA
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- Mfr.Part #
- ZXTN25040DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A SOT23-3
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 1.81W
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Continuous Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 130V
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 400mA, 4A
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 11 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transition Frequency :
- 190MHz
- Element Configuration :
- Single
- hFE Min :
- 300
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.4mm
- Base Part Number :
- ZXTN25040D
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Length :
- 3.05mm
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 190MHz
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Voltage - Rated DC :
- 40V
- Number of Pins :
- 3
- Frequency :
- 190MHz
- Terminal Position :
- Dual
- Max Collector Current :
- 4A
- Height :
- 1mm
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Saturation Voltage :
- 210mV
- Published :
- 2006
- Pin Count :
- 3
- Current Rating :
- 4A
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.25W
- Datasheets
- ZXTN25040DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 190mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 190MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 4A volts is possible.
ZXTN25040DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 190mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 190MHz
ZXTN25040DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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