ZXTN25012EFLTA
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- Mfr.Part #
- ZXTN25012EFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A SOT23-3
- Stock
- 14,231
- In Stock ：
- 14,231
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Base Part Number :
- ZXTN25012E
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 5A
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Breakdown Voltage :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Transistor Type :
- NPN
- Frequency :
- 260MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Transition Frequency :
- 260MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 350mW
- Collector Emitter Voltage (VCEO) :
- 12V
- Weight :
- 7.994566mg
- Length :
- 3.04mm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Terminal Form :
- Gull wing
- Height :
- 1.02mm
- Collector Base Voltage (VCBO) :
- 20V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 1.4mm
- Gain Bandwidth Product :
- 260MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 350mW
- Datasheets
- ZXTN25012EFLTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25012EFLTA Overview
DC current gain in this device equals 500 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 2A volts.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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