ZXTN2040FTA
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- Mfr.Part #
- ZXTN2040FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A SOT23-3
- Stock
- 736
- In Stock ：
- 736
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Width :
- 1.4mm
- Transistor Type :
- NPN
- Max Power Dissipation :
- 350mW
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1mm
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current Rating :
- 1A
- Pin Count :
- 3
- Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZXTN2040
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Datasheets
- ZXTN2040FTA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2040FTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
ZXTN2040FTA Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZXTN2040FTA Applications
There are a lot of Diodes Incorporated
ZXTN2040FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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