ZXTN2010ZTA
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- Mfr.Part #
- ZXTN2010ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT89-3
- Stock
- 6,150
- In Stock ：
- 6,150
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Contact Plating :
- Tin
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Height :
- 1.6mm
- Gain Bandwidth Product :
- 130MHz
- Transition Frequency :
- 130MHz
- Number of Elements :
- 1
- Pin Count :
- 3
- Length :
- 4.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- hFE Min :
- 20
- Max Power Dissipation :
- 2.1W
- Base Part Number :
- ZXTN2010
- Max Collector Current :
- 5A
- Weight :
- 51.993025mg
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.5W
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 300mA, 6A
- JESD-30 Code :
- R-PSSO-F3
- ECCN Code :
- EAR99
- Max Junction Temperature (Tj) :
- 150°C
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 5A
- Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 150V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 170mV
- Transistor Application :
- SWITCHING
- Current Rating :
- 5A
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Width :
- 2.6mm
- JESD-609 Code :
- e3
- Datasheets
- ZXTN2010ZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN2010ZTA Overview
This device has a DC current gain of 100 @ 2A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 170mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 5A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 5A volts.
ZXTN2010ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 230mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
ZXTN2010ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2010ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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