ZXTN19100CGTA
- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock :
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Max Power Dissipation :
- 5.3W
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Height :
- 1.65mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXTN19100C
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- ECCN Code :
- EAR99
- Published :
- 2007
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 430mV
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 5.5A
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Length :
- 6.7mm
- Transistor Type :
- NPN
- Frequency :
- 150MHz
- Power Dissipation :
- 5.3W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 200V
- Number of Terminations :
- 4
- Width :
- 3.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 3W
- Max Breakdown Voltage :
- 100V
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Datasheets
- ZXTN19100CGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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