ZXTN19100CFFTA
- Mfr.Part #
- ZXTN19100CFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 4.5A SOT23F
- Stock
- 1,225
- In Stock :
- 1,225
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 1.7mm
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 4.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 200
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Collector Current :
- 4.5A
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Height :
- 1mm
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Base Part Number :
- ZXTN19100C
- Vce Saturation (Max) @ Ib, Ic :
- 235mV @ 450mA, 4.5A
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 48.789529mg
- Collector Emitter Saturation Voltage :
- 60mV
- Published :
- 2007
- Max Power Dissipation :
- 1.5W
- Package / Case :
- SOT-23-3 Flat Leads
- Length :
- 3mm
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 16W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 200V
- Datasheets
- ZXTN19100CFFTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN19100CFFTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 60mV.A VCE saturation (Max) of 235mV @ 450mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CFFTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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