ZTX757
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- Mfr.Part #
- ZTX757
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A E-LINE
- Stock
- 1,350
- In Stock ：
- 1,350
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1W
- Mount :
- Through Hole
- Continuous Collector Current :
- -500mA
- REACH SVHC :
- No SVHC
- Weight :
- 453.59237mg
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -500mV
- Package / Case :
- E-Line-3
- JESD-609 Code :
- e3
- Width :
- 2.41mm
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 300V
- Frequency :
- 30MHz
- Voltage - Rated DC :
- -300V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Base Part Number :
- ZTX757
- Current Rating :
- -500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Height :
- 4.01mm
- Collector Emitter Voltage (VCEO) :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 4.77mm
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Published :
- 2012
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Transition Frequency :
- 30MHz
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 30MHz
- Datasheets
- ZTX757
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX757 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX757 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
ZTX757 Applications
There are a lot of Diodes Incorporated
ZTX757 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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