ZTX1149A
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- Mfr.Part #
- ZTX1149A
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 25V
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2012
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Element Configuration :
- Single
- Transition Frequency :
- 135MHz
- Pbfree Code :
- No
- Max Collector Current :
- 3A
- Weight :
- 453.59237mg
- Collector Emitter Saturation Voltage :
- -200mV
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Package / Case :
- E-Line-3
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Through Hole
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Height :
- 4.01mm
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 25V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 135MHz
- Base Part Number :
- ZTX1149A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Frequency :
- 135MHz
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 70mA, 3A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -25V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 25V
- Length :
- 4.77mm
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -3A
- Continuous Collector Current :
- -3A
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.41mm
- Datasheets
- ZTX1149A
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PNP -55°C~200°C TJ 100nA 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX1149A Overview
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 70mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As a result, the part has a transition frequency of 135MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 3A volts.
ZTX1149A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 70mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 135MHz
ZTX1149A Applications
There are a lot of Diodes Incorporated
ZTX1149A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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