ZDT605TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

150MHz

Published :

1997

Transition Frequency :

150MHz

Power Dissipation :

2.75W

Polarity :

NPN

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Power Dissipation :

2.75W

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Max Breakdown Voltage :

120V

Transistor Type :

2 NPN Darlington (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Collector Emitter Breakdown Voltage :

120V

Base Part Number :

ZDT605

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max) :

10μA

Current Rating :

1A

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

10V

Number of Elements :

2

Pin Count :

8

Voltage - Rated DC :

120V

Number of Terminations :

8

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

140V

RoHS Status :

RoHS Compliant

Max Collector Current :

1A

Package / Case :

8-SMD, Gull Wing

Collector Emitter Voltage (VCEO) :

1.5V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

1A

hFE Min :

2000

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Configuration :

2 BANKS, DARLINGTON