YJD60N04A

Manufacturer :

YANGJIE

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

Yangzhou Yangjie Electronics Co Ltd

Transistor Element Material :

SILICON

Package / Case :

TO-252

DS Breakdown Voltage-Min :

40 V

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

200 A

Terminal Position :

Single

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252

Drain-source On Resistance-Max :

0.007 Ω

Avalanche Energy Rating (Eas) :

120 mJ

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Elements :

1

Number of Terminals :

2