VN2110K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Contact Plating :

Tin

HTS Code :

8541.21.00.95

DS Breakdown Voltage-Min :

100 V

Terminal Position :

Dual

Rise Time :

5ns

Supplier Device Package :

SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Rad Hardened :

No

Factory Lead Time :

14 Weeks

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

360mW (Tc)

Product Status :

Active

Package Shape :

RECTANGULAR

Polarity :

N

Weight :

1.437803g

Radiation Hardening :

No

JESD-30 Code :

R-PDSO-G3

Operating Temp Range :

-55C to 150C

Terminal Form :

Gull wing

Power Dissipation :

360mW

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

360mW Tc

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

5 pF

Mounting :

Surface Mount

Published :

2001

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

6 ns

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Configuration :

Single

Base Product Number :

VN2110

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 10V

Manufacturer :

Microchip

Continuous Drain Current (ID) :

200mA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

MSL :

MSL 1 - Unlimited

Fall Time (Typ) :

5 ns

Number of Channels :

1

Channel Mode :

Enhancement

Qualification :

-

Continuous Drain Current :

0.2(A)

Product :

MOSFET Small Signal

Turn On Delay Time :

3 ns

Product Category :

MOSFET

Additional Feature :

HIGH INPUT IMPEDANCE

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

--

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

2.4V @ 1mA

RoHS :

Details

Package Type :

SOT-23

Drain to Source Voltage (Vdss) :

100V

Type :

Power MOSFET

Number of Terminals :

3

Brand :

Microchip Technology / Atmel

Drain-source On Resistance-Max :

4Ohm

Channel Type :

N

JEDEC-95 Code :

TO-236AB

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Operating Temperature Classification :

Military

Gate-Source Voltage (Max) :

±20(V)

Drain-Source On-Volt :

100(V)

Pin Count :

3

Continuous Drain Current Id :

200

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Mounting Style :

SMD/SMT

Drain to Source Breakdown Voltage :

100V

Subcategory :

MOSFETs

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;