VN2106N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

VN2106

Channel Type :

N

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Feedback Cap-Max (Crss) :

5 pF

Continuous Drain Current (ID) :

300mA

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60 V

Published :

2001

Type :

FET

Width :

4.19mm

Power Dissipation-Max :

1W Tc

Qualification :

-

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Vgs(th) (Max) @ Id :

2.4V @ 1mA

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Weight :

453.59237mg

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation :

1W

Current - Continuous Drain (Id) @ 25°C :

300mA Tj

DS Breakdown Voltage-Min :

60 V

Transistor Application :

SWITCHING

Minimum Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Length :

5.21mm

Peak Reflow Temperature (Cel) :

Not Applicable

Package Type :

TO-92

Rise Time :

5ns

JESD-609 Code :

e3

Maximum Operating Temperature :

+150 °C

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Supplier Device Package :

TO-92-3

Number of Elements per Chip :

1

Turn-Off Delay Time :

6 ns

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Number of Channels :

1

JEDEC-95 Code :

TO-92

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

5 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

1W (Tc)

Number of Terminations :

3

Radiation Hardening :

No

RoHS :

Details

Manufacturer :

Microchip

Mount :

Through Hole

Number of Pins :

3

Base Product Number :

VN2106

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-30 Code :

R-PBCY-T3

Drain-source On Resistance-Max :

4Ohm

Transistor Type :

1 N-Channel

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 10V

Pin Count :

3

Terminal Position :

BOTTOM

Product Type :

MOSFET

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Contact Plating :

Tin

Polarity/Channel Type :

N-Channel

Continuous Drain Current Id :

300

Surface Mount :

No

Brand :

Microchip Technology / Atmel

Subcategory :

MOSFETs

MSL :

-

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Turn On Delay Time :

3 ns

Number of Terminals :

3

Mounting Style :

Through Hole

Height :

5.33mm

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package :

Bag

FET Feature :

-