VMO580-02F
- Mfr.Part #
- VMO580-02F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 580A Y3-LI
- Stock
- 36,149
- In Stock :
- 36,149
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 200 V
- Fall Time (Typ) :
- 500 ns
- Number of Pins :
- 4
- Power Dissipation (Max) :
- -
- Drain-source On Resistance-Max :
- 0.0038Ohm
- Terminal Form :
- UNSPECIFIED
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 50mA
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 500ns
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 11
- Current Rating :
- 580A
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-XUFM-X11
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 430A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Number of Elements :
- 1
- Base Product Number :
- VMO580
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Chassis Mount
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- -
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 200 V
- Package / Case :
- Y3-Li
- Series :
- HiPerFET™
- Qualification Status :
- Not Qualified
- Terminal Position :
- UPPER
- Turn-Off Delay Time :
- 900 ns
- Drain to Source Breakdown Voltage :
- 200V
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Number of Terminals :
- 11
- Drain Current-Max (Abs) (ID) :
- 580 A
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 580A Tc
- Base Part Number :
- VMO
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 580A
- FET Type :
- N-Channel
- Supplier Device Package :
- Y3-Li
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 2750nC @ 10V
- Product Status :
- Active
- Published :
- 2002
- Datasheets
- VMO580-02F

N-Channel Bulk 3.8m Ω @ 430A, 10V ±20V 2750nC @ 10V 200 V Y3-Li
VMO580-02F Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 580A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.580 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 900 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200 V.Using drive voltage (10V) reduces this device's overall power consumption.
VMO580-02F Features
a continuous drain current (ID) of 580A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 900 ns
a 200 V drain to source voltage (Vdss)
VMO580-02F Applications
There are a lot of IXYS
VMO580-02F applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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