VMO550-01F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0021Ohm

Terminal Form :

UNSPECIFIED

Drain to Source Resistance :

2.1 mΩ

Packaging :

Bulk

Min Operating Temperature :

-40 °C

Vgs(th) (Max) @ Id :

6V @ 110mA

Terminal Position :

UPPER

Number of Pins :

4

Rds On Max :

2.1 mΩ

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

800 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 500mA, 10V

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100 V

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

4

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PUFM-X4

Package :

Bulk

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

590A

Mount :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

Product Status :

Active

Package / Case :

Y3-DCB

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Base Product Number :

VMO550

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Max Power Dissipation :

2.2 kW

Supplier Device Package :

Y3-DCB

Base Part Number :

VMO

Power Dissipation-Max (Abs) :

2200 W

Input Capacitance :

50 nF

Pulsed Drain Current-Max (IDM) :

2360A

Gate Charge (Qg) (Max) @ Vgs :

2000nC @ 10V

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Fall Time (Typ) :

200 ns

RoHS :

Compliant

Power Dissipation (Max) :

2200W (Tc)

Rise Time :

500ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Power Dissipation-Max :

2200W Tc

Power Dissipation :

2.2kW

Current - Continuous Drain (Id) @ 25°C :

590A Tc

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100 V

Drain Current-Max (Abs) (ID) :

590 A

Transistor Element Material :

SILICON

Published :

2000

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

50000pF @ 25V

Series :

HiPerFET™

FET Feature :

-

Manufacturer :

IXYS Corporation