UMT3906T106

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Mfr.Part #
UMT3906T106
Manufacturer
ROHM Semiconductor
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 40V 0.2A UMT3
Stock
158,954
In Stock :
158,954

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Emitter Base Voltage (VEBO) :
-5V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
10
Number of Pins :
3
Radiation Hardening :
No
Max Collector Current :
200mA
Gain Bandwidth Product :
250MHz
Mount :
Surface Mount
Lead Free :
Lead Free
Terminal Position :
Dual
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
-40V
Current Rating :
-200mA
Number of Elements :
1
JESD-609 Code :
e1
Continuous Collector Current :
-200mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Transistor Type :
PNP
Factory Lead Time :
13 Weeks
Published :
2007
Max Breakdown Voltage :
40V
Collector-Base Capacitance-Max :
4pF
REACH SVHC :
No SVHC
Pbfree Code :
yes
Base Part Number :
T3906
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
Gull wing
hFE Min :
30
Operating Temperature :
150°C TJ
Package / Case :
SC-70, SOT-323
Number of Terminations :
3
Transition Frequency :
250MHz
Max Power Dissipation :
6.2W
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
50nA
Voltage - Rated DC :
-40V
Pin Count :
3
Collector Emitter Breakdown Voltage :
40V
RoHS Status :
ROHS3 Compliant
Turn On Time-Max (ton) :
70ns
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Power - Max :
200mW
Collector Emitter Saturation Voltage :
-400mV
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
400mV
HTS Code :
8541.21.00.75
Datasheets
UMT3906T106
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor UMT3906T106 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:T3906, Operating Temperature:150°C TJ, Package / Case:SC-70, SOT-323, Number of Terminations:3, UMT3906T106 pinout, UMT3906T106 datasheet PDF, UMT3906T106 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor UMT3906T106 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor UMT3906T106


PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

UMT3906T106 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.

UMT3906T106 Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz


UMT3906T106 Applications


There are a lot of ROHM Semiconductor
UMT3906T106 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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