UMT1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Voltage - Rated DC :

-50V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

140MHz

Terminal Finish :

Tin/Copper (Sn/Cu)

hFE Min :

120

Continuous Collector Current :

-150mA

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Length :

2mm

Width :

1.25mm

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Height :

900μm

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Pbfree Code :

yes

Max Collector Current :

150mA

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Base Part Number :

*MT1

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

140MHz

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Collector Base Voltage (VCBO) :

60V

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Max Frequency :

140MHz

Number of Pins :

6

Transistor Type :

2 PNP (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-150mA

Max Breakdown Voltage :

50V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

150mW

JESD-609 Code :

e2

VCEsat-Max :

0.5 V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

500mV

Output Voltage :

50V

Transistor Element Material :

SILICON

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V