UMG3NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

VCEsat-Max :

0.3 V

Number of Terminations :

5

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

150mV

JESD-609 Code :

e3/e2

Voltage - Rated DC :

50V

Length :

2.1mm

Mounting Type :

Surface Mount

Terminal Finish :

TIN/TIN COPPER

Number of Elements :

2

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Published :

2012

Max Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Dissipation :

100mW

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

hFE Min :

100

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

*MG3

Width :

1.35mm

Pin Count :

5

Pbfree Code :

yes

Number of Pins :

5

Additional Feature :

Digital

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

4.7k Ω

Current Rating :

100mA

Collector Base Voltage (VCBO) :

50V

Frequency - Transition :

250MHz

Polarity :

NPN

Height :

900μm