UMD9NFHATR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Collector Emitter Breakdown (Max) :

50V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power - Max :

150mW

Package / Case :

6-VSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Copper (Sn/Cu)

JESD-609 Code :

e2

Number of Elements :

2

Number of Terminations :

6

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Resistor - Base (R1) :

10k Ω

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

NPN AND PNP

Packaging :

Tape and Reel (TR)

Transition Frequency :

250MHz

Current - Collector (Ic) (Max) :

100mA