UMD12NFHATR

Manufacturer :

ROHM Semiconductor

Product Category :

Unclassified

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Series :

*

Peak Reflow Temperature (Cel) :

260

Output Voltage :

100 mV, -100 mV

Typical Resistor Ratio :

1

DC Current Gain-Min (hFE) :

68

Package/Enclosure :

SOT-23

DC current gain hFE :

80

R1 :

4.7K Ohms

Collector-Emitter Voltage-Max :

50 V

Collector continuous current :

-100mA

Number of Elements :

2

Collector-emitter maximum voltage VCEO :

-50V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Manufacturer :

Rohm Semiconductor

Surface Mount :

yes

Product Status :

Active

Continuous Collector Current :

100mA

Characteristic frequency fT :

250MHz

RoHS :

Details

Reach Compliance Code :

Compliant

Collector-emitter saturation voltage :

-300mV

Base Product Number :

UMD12

Package / Case :

SOT-363-6

Package Shape :

RECTANGULAR

Package :

Tape and Reel (TR)

Transistor Element Material :

SILICON

R2 :

47k Ohms

Mounting Style :

SMD/SMT

Terminal Form :

Gull wing

Brand :

Rohm Semiconductor

Channel Mode :

Enhancement

Collector Current-Max (IC) :

0.1 A

Reference Standard :

AEC-Q101

Configuration :

Dual

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN AND PNP

Terminal Finish :

Tin/Copper (Sn/Cu)

ECCN Code :

EAR99

Number of Terminals :

6

Factory Lead Time :

13 Weeks

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e2

Packaging :

MouseReel

Transistor Polarity :

NPN and PNP Complement

Power Dissipation :

150mW

Power dissipation Pd :

200mW

JESD-30 Code :

R-PDSO-G6

Terminal Position :

Dual

Subcategory :

Transistors

Qualification :

-