UMC3NT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Terminal Form :

Gull wing

Number of Terminations :

5

Continuous Collector Current :

100mA

Pin Count :

5

Configuration :

COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Voltage - Rated DC :

50V

Power Dissipation :

150mW

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Number of Pins :

5

Resistor - Base (R1) :

10k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

hFE Min :

35

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Surface Mount :

yes

Min Operating Temperature :

-65°C

Number of Elements :

2

Published :

2009

Package / Case :

5-TSSOP, SC-70-5, SOT-353

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Radiation Hardening :

No

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

50V