UMB4NFHATN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature :

BUILT IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Voltage - Collector Emitter Breakdown (Max) :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

500nA ICBO

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

250MHz

Collector Emitter Breakdown Voltage :

-50V

Factory Lead Time :

13 Weeks

REACH SVHC :

Unknown

Transistor Type :

2 PNP Pre-Biased (Dual)

Power - Max :

150mW

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Transition Frequency :

250MHz

Current - Collector (Ic) (Max) :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

Number of Terminations :

6

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Pins :

6

Packaging :

Cut Tape (CT)