UMA4NT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Pin Count :

5

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

10k Ω

Power Dissipation-Max (Abs) :

0.15W

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Published :

2006

Additional Feature :

BUILT IN BIAS RESISTOR

Terminal Form :

Gull wing

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G5

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Power - Max :

150mW

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

100mA

Terminal Finish :

Tin (Sn)

Number of Terminations :

5

Surface Mount :

yes

Qualification Status :

Not Qualified

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V