TTC5200(Q)
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- Mfr.Part #
- TTC5200(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3PL
- Datasheet
- Download
- Description
- TRANS NPN 230V 15A TO3P
- Stock
- 4,967
- In Stock ：
- 4,967
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Voltage (VCEO) :
- 230V
- Height :
- 26mm
- Mount :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-3PL
- Frequency :
- 30MHz
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Collector Emitter Breakdown Voltage :
- 230V
- hFE Min :
- 80
- Power Dissipation :
- 150W
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 30MHz
- Element Configuration :
- Single
- Packaging :
- Tray
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 230V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Length :
- 20.5mm
- Published :
- 2009
- Collector Emitter Saturation Voltage :
- 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 5.2mm
- Number of Pins :
- 3
- Max Collector Current :
- 15A
- Max Power Dissipation :
- 150W
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Datasheets
- TTC5200(Q)
NPN 150°C TJ 5μA ICBO 1 Elements TO-3PL Tray Through Hole
TTC5200(Q) Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 15A volts.
TTC5200(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
TTC5200(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTC5200(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| TTC5460B,Q(S | Toshiba Electronic Devices and Storage Corporation | 11,992 | TRANSISTOR NPN TO126N |
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