TSD2150ACY RMG
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- Mfr.Part #
- TSD2150ACY RMG
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT89
- Stock
- 5,493
- In Stock ：
- 5,493
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 600 mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA, 2V
- Transistor Type :
- NPN
- Product Status :
- Obsolete
- Series :
- -
- Package :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Supplier Device Package :
- SOT-89
- Current - Collector (Ic) (Max) :
- 3 A
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 90MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Operating Temperature :
- 150°C (TJ)
- Datasheets
- TSD2150ACY RMG
NPN 150°C (TJ) 100nA (ICBO) TO-243AA Surface Mount
TSD2150ACY RMG Overview
This device has a DC current gain of 200 @ 500mA, 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of SOT-89.Detection of Collector Emitter Breakdown at 50 V maximal voltage is present.
TSD2150ACY RMG Features
the DC current gain for this device is 200 @ 500mA, 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of SOT-89
TSD2150ACY RMG Applications
There are a lot of Taiwan Semiconductor
TSD2150ACY RMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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