TP5322N8-G

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Mfr.Part #
TP5322N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 220V 260MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
15ns
Vgs (Max) :
±20V
Manufacturer :
Microchip
Number of Terminations :
3
JESD-609 Code :
e3
Element Configuration :
Single
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
220V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Drain to Source Breakdown Voltage :
-220V
Product Type :
MOSFET
ECCN Code :
EAR99
Length :
4.6mm
Transistor Type :
1 P-Channel
Power Dissipation-Max :
1.6W Ta
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pulsed Drain Current-Max (IDM) :
0.9A
JESD-30 Code :
R-PSSO-F3
Number of Pins :
4
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Series :
--
FET Feature :
--
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
10 ns
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Case Connection :
DRAIN
Published :
2013
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
1.6W (Ta)
Subcategory :
MOSFETs
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
18 Weeks
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Product Category :
MOSFET
Package :
Tape and Reel (TR)
Base Product Number :
TP5322
Power Dissipation :
1.6W
Number of Elements :
1
Product Status :
Active
Package / Case :
TO-243AA
Mounting Style :
SMD/SMT
Transistor Polarity :
P-Channel
Brand :
Microchip Technology
Terminal Form :
Flat
Time@Peak Reflow Temperature-Max (s) :
40
Qualification Status :
Not Qualified
Supplier Device Package :
TO-243AA (SOT-89)
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Width :
2.6mm
Turn-Off Delay Time :
20 ns
Drain Current-Max (Abs) (ID) :
0.26A
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Product :
MOSFET Small Signal
Configuration :
Single
Height :
1.6mm
Resistance :
12Ohm
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
Number of Channels :
1
Fall Time (Typ) :
15 ns
Continuous Drain Current (ID) :
-260mA
Weight :
52.786812mg
Datasheets
TP5322N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5322N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:4, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, TP5322N8-G pinout, TP5322N8-G datasheet PDF, TP5322N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5322N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5322N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-243AA

TP5322N8-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 25V.This device has a continuous drain current (ID) of [-260mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-220V, the drain-source breakdown voltage is -220V.A device's drain current is its maximum continuous current, and this device's drain current is 0.26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 0.9A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 220V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

TP5322N8-G Features


a continuous drain current (ID) of -260mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.9A.
a 220V drain to source voltage (Vdss)


TP5322N8-G Applications


There are a lot of Microchip Technology
TP5322N8-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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