TP5322K1-G

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Mfr.Part #
TP5322K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 220V 120MA TO236AB
Stock
2,060
In Stock :
2,060

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
15 ns
Pin Count :
3
Power Dissipation (Max) :
360mW (Ta)
Package Type :
SOT-23
Operating Temp Range :
-55C to 150C
Drain to Source Voltage (Vdss) :
220V
Series :
--
ECCN Code :
EAR99
Continuous Drain Current Id :
120
Element Configuration :
Single
Terminal Position :
Dual
Supplier Device Package :
TO-236AB (SOT23)
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
260
Operating Temperature Classification :
Military
Terminal Form :
Gull wing
Polarity :
P
Height :
950μm
Number of Channels :
1
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Vgs (Max) :
±20V
Base Product Number :
TP5322
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Manufacturer :
Microchip
Rad Hardened :
No
Transistor Type :
1 P-Channel
JESD-609 Code :
e3
Mount :
Surface Mount
Channel Type :
P
Power Dissipation-Max :
360mW Ta
Gate-Source Voltage (Max) :
±20(V)
Factory Lead Time :
5 Weeks
Product :
MOSFET Small Signal
Feedback Cap-Max (Crss) :
20 pF
Published :
2013
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Product Status :
Active
Mounting Type :
Surface Mount
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Continuous Drain Current :
0.12(A)
Maximum Operating Temperature :
+ 150 C
Mounting :
Surface Mount
Continuous Drain Current (ID) :
120mA
Additional Feature :
LOGIC LEVEL COMPATIBLE
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C :
120mA Tj
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Qualification Status :
Not Qualified
Power Dissipation :
360mW
FET Feature :
--
Subcategory :
MOSFETs
Transistor Application :
SWITCHING
Number of Pins :
3
Mounting Style :
SMD/SMT
Channel Mode :
Enhancement
Time@Peak Reflow Temperature-Max (s) :
40
Brand :
Microchip Technology / Atmel
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-220V
Number of Elements :
1
Transistor Polarity :
P-Channel
Operating Mode :
ENHANCEMENT MODE
Length :
2.9mm
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Width :
1.3mm
Drain-Source On-Volt :
220(V)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Weight :
1.437803g
Turn On Delay Time :
10 ns
Packaging :
Tape and Reel (TR)
Rise Time :
15ns
Turn-Off Delay Time :
20 ns
Type :
Power MOSFET
Gate to Source Voltage (Vgs) :
20V
FET Type :
P-Channel
Datasheets
TP5322K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, Type:Power MOSFET, TP5322K1-G pinout, TP5322K1-G datasheet PDF, TP5322K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5322K1-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3

TP5322K1-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

TP5322K1-G Features


a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)


TP5322K1-G Applications


There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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