TP5322K1-G
- Mfr.Part #
- TP5322K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 220V 120MA TO236AB
- Stock
- 2,060
- In Stock :
- 2,060
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 15 ns
- Pin Count :
- 3
- Power Dissipation (Max) :
- 360mW (Ta)
- Package Type :
- SOT-23
- Operating Temp Range :
- -55C to 150C
- Drain to Source Voltage (Vdss) :
- 220V
- Series :
- --
- ECCN Code :
- EAR99
- Continuous Drain Current Id :
- 120
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Supplier Device Package :
- TO-236AB (SOT23)
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature Classification :
- Military
- Terminal Form :
- Gull wing
- Polarity :
- P
- Height :
- 950μm
- Number of Channels :
- 1
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Vgs (Max) :
- ±20V
- Base Product Number :
- TP5322
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Manufacturer :
- Microchip
- Rad Hardened :
- No
- Transistor Type :
- 1 P-Channel
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Channel Type :
- P
- Power Dissipation-Max :
- 360mW Ta
- Gate-Source Voltage (Max) :
- ±20(V)
- Factory Lead Time :
- 5 Weeks
- Product :
- MOSFET Small Signal
- Feedback Cap-Max (Crss) :
- 20 pF
- Published :
- 2013
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Continuous Drain Current :
- 0.12(A)
- Maximum Operating Temperature :
- + 150 C
- Mounting :
- Surface Mount
- Continuous Drain Current (ID) :
- 120mA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Tj
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 360mW
- FET Feature :
- --
- Subcategory :
- MOSFETs
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Brand :
- Microchip Technology / Atmel
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -220V
- Number of Elements :
- 1
- Transistor Polarity :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 2.9mm
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Drain-Source On-Volt :
- 220(V)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 1.437803g
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 15ns
- Turn-Off Delay Time :
- 20 ns
- Type :
- Power MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Datasheets
- TP5322K1-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3
TP5322K1-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP5322K1-G Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)
TP5322K1-G Applications
There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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