TP5322K1-G

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Mfr.Part #
TP5322K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 220V 120MA TO236AB
Stock
2,060
In Stock :
2,060

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
-220V
Transistor Application :
SWITCHING
Power Dissipation :
360mW
Fall Time (Typ) :
15 ns
Turn-Off Delay Time :
20 ns
Number of Terminations :
3
FET Type :
P-Channel
Mounting :
Surface Mount
ECCN Code :
EAR99
Base Product Number :
TP5322
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Continuous Drain Current Id :
120
Length :
2.9mm
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Power Dissipation-Max :
360mW Ta
Drain to Source Voltage (Vdss) :
220V
Operating Temperature Classification :
Military
Minimum Operating Temperature :
- 55 C
Feedback Cap-Max (Crss) :
20 pF
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
Transistor Type :
1 P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Continuous Drain Current :
0.12(A)
Channel Type :
P
Terminal Position :
Dual
Channel Mode :
Enhancement
RoHS :
Details
Published :
2013
Weight :
1.437803g
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Vgs (Max) :
±20V
Manufacturer :
Microchip
Product Type :
MOSFET
Mounting Style :
SMD/SMT
Rad Hardened :
No
Additional Feature :
LOGIC LEVEL COMPATIBLE
Gate-Source Voltage (Max) :
±20(V)
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Rise Time :
15ns
Polarity :
P
Operating Temp Range :
-55C to 150C
Operating Temperature :
-55°C~150°C TJ
Subcategory :
MOSFETs
Width :
1.3mm
Number of Elements :
1
Number of Pins :
3
Product Category :
MOSFET
Factory Lead Time :
5 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-236AB (SOT23)
Package Type :
SOT-23
Transistor Polarity :
P-Channel
Power Dissipation (Max) :
360mW (Ta)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Continuous Drain Current (ID) :
120mA
Mount :
Surface Mount
Series :
--
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Number of Channels :
1
Height :
950μm
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Type :
Power MOSFET
Product :
MOSFET Small Signal
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
120mA Tj
Transistor Element Material :
SILICON
Brand :
Microchip Technology / Atmel
Configuration :
Single
Drain-Source On-Volt :
220(V)
Turn On Delay Time :
10 ns
Operating Mode :
ENHANCEMENT MODE
Datasheets
TP5322K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Type:Power MOSFET, TP5322K1-G pinout, TP5322K1-G datasheet PDF, TP5322K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5322K1-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3

TP5322K1-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

TP5322K1-G Features


a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)


TP5322K1-G Applications


There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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