TP0620N3-G

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Mfr.Part #
TP0620N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 200V 175MA TO92-3
Stock
9,404
In Stock :
9,404

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Power Dissipation (Max) :
1W (Ta)
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Drain-Source On-Volt :
200(V)
Product Status :
Active
Series :
--
Gate to Source Voltage (Vgs) :
20V
Operating Temp Range :
-55C to 150C
Mounting :
Through Hole
Additional Feature :
LOW THRESHOLD
Terminal Finish :
Matte Tin (Sn)
Resistance :
12Ohm
Minimum Operating Temperature :
- 55 C
Power Dissipation :
1W
Lead Free :
Lead Free
FET Type :
P-Channel
Mounting Type :
Through Hole
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Channels :
1
Type :
Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Brand :
Microchip Technology
Mount :
Through Hole
RoHS :
Details
Transistor Polarity :
P-Channel
Package :
Bag
Weight :
219.992299mg
Rad Hardened :
No
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Gate-Source Voltage (Max) :
±20(V)
Continuous Drain Current (ID) :
-175mA
Length :
5.21mm
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
5 Weeks
Turn On Delay Time :
10 ns
FET Feature :
--
Packaging :
Bulk
Vgs (Max) :
±20V
Number of Terminations :
3
Turn-Off Delay Time :
20 ns
Channel Mode :
Enhancement
Rise Time :
15ns
Package Type :
TO-92
Supplier Device Package :
TO-92-3
Operating Temperature Classification :
Military
Subcategory :
MOSFETs
Published :
2013
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
Terminal Form :
Wire
Fall Time (Typ) :
16 ns
Power Dissipation-Max :
1W Ta
Transistor Element Material :
SILICON
Number of Elements :
1
Transistor Type :
1 P-Channel
Element Configuration :
Single
Continuous Drain Current :
0.175(A)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting Style :
Through Hole
Height :
5.33mm
Configuration :
Single
JESD-609 Code :
e3
Manufacturer :
Microchip
Polarity :
P
Width :
4.19mm
Base Product Number :
TP0620
Drain to Source Voltage (Vdss) :
200V
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
-200V
Pin Count :
3
Datasheets
TP0620N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Type:Power MOSFET, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TP0620N3-G pinout, TP0620N3-G datasheet PDF, TP0620N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0620N3-G


P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)

TP0620N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

TP0620N3-G Features


a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)


TP0620N3-G Applications


There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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