TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity :
P
Turn On Delay Time :
5 ns
Number of Channels :
1
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Drain-Source On-Volt :
40(V)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Power Dissipation :
1W
Supplier Device Package :
TO-92-3
Channel Mode :
Enhancement
Weight :
453.59237mg
Drain to Source Voltage (Vdss) :
40V
Mounting Type :
Through Hole
Base Product Number :
TP0604
RoHS :
Details
Width :
4.19mm
Drain to Source Breakdown Voltage :
-40V
Number of Pins :
3
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Gate-Source Voltage (Max) :
±20(V)
Continuous Drain Current Id :
430
Mount :
Through Hole
Element Configuration :
Single
Configuration :
Single
Factory Lead Time :
7 Weeks
FET Type :
P-Channel
Length :
5.21mm
Packaging :
Bulk
Rad Hardened :
No
Continuous Drain Current :
0.43(A)
Terminal Finish :
Matte Tin (Sn)
Package :
Bag
Drain-source On Resistance-Max :
2Ohm
Power Dissipation-Max :
740mW Ta
Mounting :
Through Hole
Operating Temperature Classification :
Military
Channel Type :
P
Number of Elements :
1
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
0.75A
Rise Time :
7ns
JESD-609 Code :
e3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Manufacturer :
Microchip
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
10 ns
Brand :
Microchip Technology / Atmel
Type :
Power MOSFET
Transistor Polarity :
P-Channel
FET Feature :
-
Fall Time (Typ) :
6 ns
Continuous Drain Current (ID) :
430mA
Height :
5.33mm
Product Category :
MOSFET
Feedback Cap-Max (Crss) :
60 pF
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Operating Temp Range :
-55C to 150C
Package Type :
TO-92
Power Dissipation (Max) :
740mW (Ta)
Published :
2012
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Transistor Type :
1 P-Channel
Number of Terminations :
3
Series :
-
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
BOTTOM
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Terminations:3, TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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