SUD50N024-09P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Pins :

2

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Number of Elements :

1

Turn-Off Delay Time :

25 ns

Pulsed Drain Current-Max (IDM) :

100A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

6.5W Ta 39.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

2

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

49A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

12 ns

Terminal Finish :

MATTE TIN OVER NICKEL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Pin Count :

4

Drain-source On Resistance-Max :

0.017Ohm

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Element Configuration :

Single

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

22V

Power Dissipation :

6.5W

Series :

TrenchFET®

Published :

2009

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Vgs (Max) :

±20V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 20A, 10V