SUD50N02-04P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

20ns

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 10V

Radiation Hardening :

No

Continuous Drain Current (ID) :

34A

Turn-Off Delay Time :

50 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Power Dissipation-Max :

8.3W Ta 136W Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Power Dissipation :

8.3W

Pulsed Drain Current-Max (IDM) :

100A

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Number of Pins :

2

Mounting Type :

Surface Mount

Pin Count :

4

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.006Ohm

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1